sot23 pnp silicon planar small signal transistors issue 3 - july 1995 partmarking details ? bcw29 - c1 bcw30 - c2 BCW29R - c4 bcw30r - c5 complementary types ? bcw29 - bcw31 bcw30 - bcw32 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -20 v peak pulse current i cm -5 a continuous collector current i c -100 a power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. base - emitter voltage v be -600 -750 mv i c =-2ma, v ce =- 5v collector-emitter saturation voltage v ce(sat) -80 -150 250 mv mv i c =-10ma, i b = - 0.5ma i c =-50ma, i b =-2.5ma base-emitter saturation voltage v be(sat) -720 -810 mv mv i c =-10ma, i b =-0.5ma i c =-50ma, i b =-2.5ma collector- base cut-off current i cbo -100 -10 na m a i e =0, v cb =-20v i e =0,vcb=-20v, t j = 100 o c static forward current transfer ratio bcw29 h fe 120 90 260 i c =-10 m a, v ce =-5v i c =-2ma, v ce =-5v bcw30 h fe 215 150 500 ic=-10 m a, v ce =-5v i c =-2ma, v ce =-5v transition frequency f t 150 mhz i c =-10ma, v ce =-5v f = 35mhz collector capacitance c tc 7pfi e =i e =0, v cb =-10v f= 1mhz noise figure n 10 db i c = -200ma, v ce =-5v r s =2k w , f=1khz b= 200hz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device bcw29 bcw30 c b e sot23
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